집적회로공정 13강 - Ion implantation

1. Dose vs. concentration 2. Junction depth 3. Sheet resistance of ion implanted layer 4. Ion channeling

집적회로공정 14강 - Ion implantation

1. Ion channeling 2. Implantation damage 3. Dopant activation

집적회로공정 15강 - Diffusion

1. Dopant diffusion 2. Diffusion mechanisms in Si 3. Diffusion process modeling

집적회로공정 16강 - Diffusion

1. High concentration diffusion effect 2. Oxidation enhanced diffusion (OED) 3. Sheet resistance

집적회로공정 17강 - Gate stack

1. Gate leakage current 2. Tunneling mechanisms 3. Evaluation of gate dielectric thickness 4. Equivalent oxide thickness (EOT) 5. High-k gate dielectric